Susanne Mirbt
Professor vid Institutionen för fysik och astronomi; Materialteori
- Telefon:
- 018-471 36 22
- Mobiltelefon:
- 070-883 42 82
- E-post:
- susanne.mirbt@uu.se
- Besöksadress:
- Ångströmlaboratoriet, Lägerhyddsvägen 1
- Postadress:
- Box 516
751 20 UPPSALA
Enhetschef vid Universitetsförvaltningen; Avdelningen för kvalitetsutveckling; Enheten för universitetspedagogik
- Mobiltelefon:
- 070-883 42 82
- E-post:
- susanne.mirbt@uu.se
- Besöksadress:
- Dag Hammarskjöldsväg 7
75237 Uppsala - Postadress:
- Box 256
75105 Uppsala
- Akademiska meriter:
- FD, docent i fysik
Mer information visas för dig som medarbetare om du loggar in.
Nyckelord
- chalcogenides
- condensed matter physics
- density functional theory
- iii-v semiconductors
- interface magnetism
- materials theory
- polarons
- semiconductor defects
- tio2
Publikationer
Senaste publikationer
- Subsurface Polaron Concentration As a Factor in the Chemistry of Reduced TiO2 (110) Surfaces (2017)
- High resistivity in undoped CdTe (2016)
- Cl-doping of Te-rich CdTe (2015)
- Small hole polaron in CdTe: Cd-vacancy revisited (2015)
- Bipolaron Formation Induced by Oxygen Vacancy at Rutile TiO2(110) Surfaces (2014)
Alla publikationer
Artiklar
- Subsurface Polaron Concentration As a Factor in the Chemistry of Reduced TiO2 (110) Surfaces (2017)
- High resistivity in undoped CdTe (2016)
- Cl-doping of Te-rich CdTe (2015)
- Small hole polaron in CdTe: Cd-vacancy revisited (2015)
- Bipolaron Formation Induced by Oxygen Vacancy at Rutile TiO2(110) Surfaces (2014)
- Excess electron trapping at surface oxygen vacancy in TiO2 (2014)
- Materials modelling for energy and fuels (2014)
- Hydrogen on III-V (110) surfaces (2013)
- Tailoring of defect levels by deformations (2013)
- A systematic study of polarons due to oxygen vacancy formation at the rutile TiO2(110) surface by GGA plus U and HSE06 methods (2012)
- Density functional theory calculations of defect energies using supercells (2009)
- Influence of Vanadium spin-polarization on the dissolution of Hydrogen in Vanadium (2009)
- Diffusion mechanism of Zn in InP and GaP from first principles (2008)
- Increasing the equilibrium solubility of dopants in semiconductor multilayers and alloys (2008)
- Breakdown of cation vacancies into anion vacancy-antisite complexes on III-V semiconductor surfaces (2008)
- Anomalous bismuth-stabilized (2x1) reconstructions on GaAs(100) and InP(100) surfaces (2008)
- Anomalies in transition metal conductivity (2008)
- Bismuth-stabilized (2x1) and (2x4) reconstructions on GaAs(100) surfaces (2008)
- Theoretical calculations of mobility enhancement in strained silicon (2007)
- Managing the supercell approximation for charged defects in semiconductors: Finite-size scaling, charge correction factors, the band-gap problem, and the ab initio dielectric constant (2006)
- Managing the supercell approximation for charged defects in semiconductors: Finite-size scaling, charge correction factors, the band-gap problem, and the ab initio dielectric constant (2006)
- Point defects on the (110) surfaces of InP, InAs, and InSb (2006)
- Relative concentration and structure of native defects in GaP (2005)
- Relative concentration and structure of native defects in GaP (2005)
- H placement in Cr(Mo, Fe)/V supercells: The origin of the dead layers (2005)
- H placement in Cr(Mo,Fe)/V supercells: The origin of the dead layers. (2005)
- Effect of the Mn clustering in (GaMn)N on magnetic transition temperature (2005)
- Electronic structure and magnetism of diluted magnetic semiconductors-a first principles study (2005)
- Electronic structure and magnetism of diluted magnetic semiconductors - a first principles study (2005)
- Origin of the negative GMR effects in Cr_xCo_1-x/cu/Co (111) trilayers (2004)
- Finite-size scaling as a cure for supercell approximation errors in calculations of neutral native defects in InP. (2004)
- Resistivity of hydrogen-loaded Fe/V and Mo/V (100) superlattices: The role of vanadium expansion (2004)
- Resistivity of hydrogen-loaded Fe/V and Mo/V (100) superlattices: (2004)
- Resistivity of hydrogen-loaded Fe/V and Mo/V (100) superlattices: The role of vanadium expansion (2004)
- Defect structure of Ga1−xMnxAs: (2004)
- Magnetic and electronic structure of (Ga1-xMnx)As (2003)
- Structure of the [Zn_In-V_P] defect complex in Zn doped InP (2003)
- First-principles calculations of Fe on GaAs(100) (2003)
- Structure of the P vacancy on the InP(110) surface from first principles (2003)
- Electronic structure and magnetism of Mn-doped GaN (2003)
- Magnetic properties of 3d-impurities substituted in GaAs (2002)
- Atomic and electronic properties on the In-group-V (110) anion vacancy surfaces (2002)
- Structural and magnetic properties of Fe/ZnSe interfaces (2002)
- A general rule for surface reconstructions of III-V semiconductors (1999)
- Why does charge accumulate on the surfaces of InAs but not on other III-V semiconductors?
- Influence of magnetization on Hydrogen dissolution in Vanadium
- Piezoresistivity of Metals: Manifestation of orbital orientation
- Conductivity of strained Si from first principles
- Conductivity dependence on extra charge in bulk Cr and Mo
- Conductivity variation upon hydrogen loading within Cr/V multi layers
- The nature of cation vacancies on III-V semiconductor surfaces
- Diffusion mechanism of Zn in InP and GaP
- Calculated STM-images of native defects on the (110) surfaces of InP, InAs, and InSb
- Equilibrium solubility of dopants and substitutional defects in binary and ternary semiconductor structures:
- Ordered defect phases in CIGS form llocalized electron paths
- Piezoresistivity: Dependence on the Fermi Surface
- Trends and anomalies in 3d transition metal conductivity
Kapitel
