Jörgen Olsson
Professor i fasta tillståndets elektronik vid Institutionen för materialvetenskap; Solcellsteknik
- Telefon:
- 018-471 30 35
- Mobiltelefon:
- 070-656 42 07
- E-post:
- jorgen.olsson@angstrom.uu.se
- Besöksadress:
- Ångströmlaboratoriet, Lägerhyddsvägen 1
- Postadress:
- Box 35
751 03 UPPSALA
Ladda ned kontaktuppgifter för Jörgen Olsson vid Institutionen för materialvetenskap; Solcellsteknik
- Akademiska meriter:
- TeknD, Docent i teknisk fysik med inriktning mot elektronik
- CV:
- Ladda ned CV
- ORCID:
- 0000-0002-9882-4782
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Kort presentation
Stf. Prefekt, Institutionen för materialvetenskap
Studierektor för forskarutbildning, Institutionen för materialvetenskap
Ordförande Forskarutbildningsnämnden (FUN), Teknat
Ledamot i Forskningsberedningen (FB) och Utbildningsberedningen (UB), Teknat
Forskarutbildningsansvarig professor (FUAP) för Teknisk fysik (utan inriktning)
Forskarutbildningsansvarig professor (FUAP) för Teknisk fysik med inriktning mot mikrovågsteknik
Pedagogisk mentor
Biografi
Prof. Jörgen Olsson received the Ph.D. degree in electronics from Uppsala University, Sweden, in 1996. During 1997 he was a visiting scientist at Digital Semiconductor, Hudson, MA, USA, working on modeling of ion implantation and CMOS process integration. In 2008 he was promoted to Professor in Solid-State Electronics, Uppsala University. He was the head of the Solid State Device Group at the Ångström Laboratory, Uppsala University. His research interests include the fields of high-frequency MOS-based devices and processes, SOI-technology, and RF-power devices. Recent research is focused on thin-film solar cells. He is also the director of postgraduate studies and the deputy head of the department of materials science and engineering. He is author of over 180 scientific papers in international journals and conferences.
Publikationer
Urval av publikationer
- Power Performance of 65 nm CMOS Integrated LDMOS Transistors at WLAN and X-band Frequencies (2016)
- A New Latch-Free LIGBT on SOI with Very High Current Density and Low Drive Voltage (2016)
- Investigating reliability and stress mechanisms of DC and large-signal stressed CMOS 65-nm RF-LDMOS by gate current characterization (2015)
- Stress and reliability of integrated RF-LDMOS transistors (2015)
- A New Latch-Free LIGBT on SOI (2015)
- Thermal characterization of polycrystalline SiC (2014)
- RF losses, crosstalk and temperature dependence for SOI and Si/SiC hybrid substrates (2014)
- High-temperature behaviour of capped Ag/Ta and Ag/TaN metal stacks (2014)
- Electrical properties of Ag/Ta and Ag/TaN thin-films (2014)
- Morphological instability of Ag films caused by phase transition in the underlying Ta barrier layer (2014)
- A +32.8 dBm LDMOS power amplifier for WLAN in 65 nm CMOS technology (2013)
- RF losses, crosstalk and temperature dependence for SOI and Si/SiC hybrid substrates (2013)
Senaste publikationer
- Kilowatt Power Amplifier With Improved Power Back-Off Efficiency for Cyclotron Application (2022)
- Taper Transmission Line Based Measurement—An Thru-Only De-Embedding Approach (2022)
- An improved analytical model for broadside coupled transmission line used on planar circuit (2021)
- Amorphous tin-gallium oxide buffer layers in (Ag,Cu)(In,Ga)Se2 solar cells (2020)
- Feedback compensated 10 kW solid-state pulsed power amplifier at 352 MHz for particle accelerators (2019)
Alla publikationer
Artiklar
- Kilowatt Power Amplifier With Improved Power Back-Off Efficiency for Cyclotron Application (2022)
- Taper Transmission Line Based Measurement—An Thru-Only De-Embedding Approach (2022)
- An improved analytical model for broadside coupled transmission line used on planar circuit (2021)
- Amorphous tin-gallium oxide buffer layers in (Ag,Cu)(In,Ga)Se2 solar cells (2020)
- Feedback compensated 10 kW solid-state pulsed power amplifier at 352 MHz for particle accelerators (2019)
- Interface Dependent Effective Mobility in Graphene Field Effect Transistors (2018)
- Protein sensing beyond the Debye Length Using Graphene Field-effect Transistors (2018)
- Time Domain Characterization of High Power Solid State Amplifiers for the Next Generation Linear Accelerators (2018)
- On the extraction of doping concentration from capacitance-voltage (2017)
- Mobility and charge transport mechanisms of a field grading material (2017)
- A Systematic Study of Light-On-Bias Behavior in Cu(In,Ga)Se2 Solar Cells With Varying Absorber Compositions (2017)
- Advancing the understanding of reverse breakdown in Cu(In,Ga)Se2 solar cells (2017)
- Combining strong interface recombination with bandgap narrowing and short diffusion length in Cu2ZnSnS4 device modeling (2016)
- Power Performance of 65 nm CMOS Integrated LDMOS Transistors at WLAN and X-band Frequencies (2016)
- Electromigration behavior of Cu metallization interfacing with Ta versus TaN at high temperatures (2016)
- A New Latch-Free LIGBT on SOI with Very High Current Density and Low Drive Voltage (2016)
- A two-in-one process for reliable graphene transistors processed with photolithography (2015)
- Investigating reliability and stress mechanisms of DC and large-signal stressed CMOS 65-nm RF-LDMOS by gate current characterization (2015)
- Influence of tantalum/tantalum nitride barriers and caps on the high-temperature properties of copper metallization for wide-band gap applications (2015)
- Optimizing Ga-profiles for highly efficient Cu(In,Ga)Se2 thin film solar cells in simple and complex defect models (2014)
- Thermal characterization of polycrystalline SiC (2014)
- Dynamics of SiO2 Buried Layer Removal from Si-SiO2-Si and Si-SiO2-SiC Bonded Substrates by Annealing in Ar (2014)
- RF losses, crosstalk and temperature dependence for SOI and Si/SiC hybrid substrates (2014)
- Electrical properties of Ag/Ta and Ag/TaN thin-films (2014)
- Morphological instability of Ag films caused by phase transition in the underlying Ta barrier layer (2014)
- Fabrication and Characterization of 150 mm Silicon-on-polycrystalline-Silicon Carbide Substrates (2012)
- LDMOS-transistors on semi-insulating silicon-on-polycrystalline-silicon carbide substrates for improved RF and thermal properties (2012)
- Electrical characterization of wurtzite (Al,B)N thin films (2011)
- Oxygen out-diffusion from buried layers in SOI and SiC-SOI substrates (2010)
- Large-signal analysis of substrate effects in RF-power SOI-LDMOS transistors (2010)
- Investigation of SOI-LDMOS for RF-power applications using Computational Load-Pull (2009)
- A Computational Load-Pull Method with Harmonic Loading for High-Efficiency Investigations (2009)
- Thick NiSi Electrodes for AlN Electroacoustic Applications (2009)
- Investigation of the non-linear input capacitance in LDMOS transistors and its contribution to IMD and phase distortion (2008)
- Oxide-Free Silicon to Silicon Carbide Heterobond (2008)
- Optimisation of a smooth multilayer Nickel Silicide surface for ALN growth (2008)
- SB-MOSFETs in UTB-SOI featuring PtSi source/drain with dopant segregation (2008)
- Processing and evaluation of metal gate/high-k/Si capacitors incorporating Al, Ni, TiN, and Mo as metal gate, and ZrO2 and HfO2 as high-k dielectric (2007)
- Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown HfO2 and ZrO2 high-k dielectrics (2007)
- Low Resistivity SOI for Substrate Crosstalk Reduction (2005)
- Anisotropic dry etching of boron doped single crystal CVD diamond (2005)
- Metal gate work function extraction using Fowler-Nordheim tunneling techniques (2005)
- Investigation of the Thermal Stability of Reactively Sputter Deposited TiN MOS Gate Electrodes (2005)
- Low-frequency noise and Coulomb scattering in Si0.8 Ge0.2 surface channel pMOSFETs with ALD Al2O3 gate dielectrics (2005)
- Low-resistivity ZrNx metal gate in MOS devices (2005)
- Simulation and modeling of the substrate contribution to the output resistance for RF-LDMOS power transistors (2004)
- Modeling and characterization of capacitive coupling in trench-isolated structures on SOI substrates (2004)
- Electrothermal Simulations of High-Power SOI Vertical DMOS Transistors with Lateral Drain Contacts under Unclamped Inductive Switching Test (2004)
- High-Power SOI Vertical DMOS Transistors with Lateral Drain Contacts (2004)
- Variable work function in MOS capacitors utilizing nitrogen-controlled TiNx gate electrodes (2004)
- Small Signal and Power Evaluation of Novel BiCMOS -Compatible Short-Channel LDMOS Technology (2003)
- Electrical Characterization of AlN MIS and MIM Structures (2003)
- Investigation of the electrical behavior of an asymmetric MOSFET (2003)
- Analysis of the Specific On-Resistance of Vertical High-Voltage DMOSFETs on SOI (2003)
- On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices (2003)
- A Novel Strained Si0.7Ge0.3 Surface-Channel pMOSFET with an ALD TiN/Al2O3/HfAlOx/Al2O3 Gate Stack (2003)
- Sub-Circuit Based SPICE Model for High Voltage LDMOS Transistors (2002)
- Effect of dopants on chemical mechanical polishing of silicon (2002)
- Chemical mechanical polishing for surface smoothing (2002)
- Deposition of HfO2 thin films in HfI4-based processes (2002)
- Iodide-Based Atomic Layer Deposition of ZrO2 (2002)
- 1 W/mm RF Power Denisty at 3.2 GHz for a Dual-Layer RESURF LDMOS Transistor (2002)
- Self Heating Effects of High Power SOI Vertical DMOS Transistors with Lateral Drain Contacts (2002)
- Unclamped Inductive Switching Behaviour of High-Power SOI Vertical DMOS Transistor with Lateral Drain Contacts (2002)
- Analysis and Design of a Low-Voltage High-Frequency LDMOS Transistor (2002)
- Drift Region Optimization of Lateral RESURF Devices (2002)
- Simulation and dielectric characterization of reactive dc magnetron co-sputtered (Ta2O5)1-x(TiO2)x thin films (2002)
- Integration of high voltage devices on thick SOI substrates for automotive applications (2001)
- Self-heating effects in SOI bipolar transistors (2001)
- Membrane Covered Electrically Isolated Through-Wafer Via Hole (2001)
- Channel length extraction for DMOS transistors using capacitance-voltage measurements (2001)
- Electrical investigation of the silicon/diamond interface (1997)
- Simulation of forward bias injection in proton irradiated silicon pn-junctions (1996)
- Electrical characterisation of silicon pn-junctions terminated with diamond (1996)
- Transient Measurements of Heat Distribution in Devices Fabricated on Silicon-On Diamond Material (1995)
- Vacancy related defect profiles in MeV cluster-ion irradiated silicon (1995)
- High Current Gain Hybrid Lateral Bipolar Operation of DMOS Transistors (1995)
- Theoretical Models for the Action Spectrum and the Current-Voltage Characteristics of Microporous Semiconductor Films in Photoelectrochemical Cells (1994)
- Very High Current Gain Enhancement by Substrate Biasing of Lateral Bipolar Transistors on Thin SOI (1993)
- A Self-Aligned Lateral Bipolar Transistor Concept Realized on SIMOX-material (1993)
- Investigation of the Current-Voltage Behavior of a Combined Schottky-p-n diode (1992)
Böcker
Kapitel
Konferenser
- Implementation of a Highly Efficient Solid State RF Power Source for Superconducting Cavities (2018)
- Optimal Power Consumption during the Charging of Superconducting Cavities using Drain Voltage Modulation of Solid State Power Amplifiers (2018)
- Preliminary measurements of eight solid-statemodules of the 10 kW pulsed power amplifier at 352 MHz under development at FREIA (2016)
- Time domain characterization of high power RFpulsed solid state amplifiers for linear accelerators (2016)
- Stress and reliability of integrated RF-LDMOS transistors (2015)
- A New Latch-Free LIGBT on SOI (2015)
- High-temperature behaviour of capped Ag/Ta and Ag/TaN metal stacks (2014)
- LDMOS with over 0.3 W/mm output power at 8 GHz integrated in 65nm CMOS (2014)
- Modeling Ga-profiles for Cu(In,Ga)Se2 thin film solar cells with varying defect density (2013)
- A +32.8 dBm LDMOS power amplifier for WLAN in 65 nm CMOS technology (2013)
- RF losses, crosstalk and temperature dependence for SOI and Si/SiC hybrid substrates (2013)
- The future of solid-state transistors (2013)
- Self-heating and scaling effects of multi-finger LDMOS transistors on SOI and Si-on-SiC hybrid substrates with diamond heat-spreading layer (2012)
- Mobility Profiles and Thermal Characterization of SOI and Si-on-SiC hybrid substrates (2011)
- LDMOS transistors on 150 mm silicon-on-polycrystalline-silicon carbide hybrid substrates (2011)
- Drift in thin film SOI piezoresistors (2010)
- Electrical and Thermal Characterization of 150 mm Silicon–on–polycrystalline-Silicon Carbide Hybrid Substrates (2010)
- 150 mm Silicon-on-polycrystalline-Silicon Carbide (2010)
- Enhanced drift in RF-power LDMOS transistors under pulsed stress conditions (2010)
- Resistance Electric Field Dependence and Time Drift of Piezoresistive Single Crystalline Silicon Nanofilms (2009)
- A Load-Pull Based Device Evaluation Method for Bias Modulated Applications (2009)
- A Novel Load-Pull Setup with Envelope Calibration for Bias Modulated Measurements (2009)
- Study of Oxygen Out-diffusion from buried oxide layers in Si/SiC hybrid- and SOI-substrates (2009)
- LDMOS transistors on Si-on-SiC hybrid substrates having crystalline or poly-crystalline SiC - Electrical and thermal characterization (2009)
- Increased efficiency in RF-power SOI-LDMOS transistors (2009)
- A computational load-Pull Investigation of Harmonic Loading effects on AM-PM conversion (2008)
- A Computational Load-Pull Method for TCAD Optimization of RF-Power Transistors in Bias-Modulation Applications (2008)
- Oxide-Free Silicon to Silicon Carbide Heterobond (2008)
- Thick Silicides Synthesised With Smooth Surface for Integrated TFBAR Applications (2008)
- Buried aluminum nitride insulator for improving thermal conduction in SOI (2008)
- Improved Thermal Characteristics in SOI using a Buried Aluminium Nitride Insulator (2008)
- Silicon-on-SiC hybrid substrate with improved high-frequency and thermal performance (2008)
- Silicon-on-SiC hybrid substrate with low RF-losses and improved thermal performance (2008)
- Role of Si implantation in control of underlap length in Schottky-barrier source/drain MOSFETs on ultrathin body SOI (2008)
- Thermal characterization of Silicon-on-SiC substrates (2008)
- Oxide free wafer bonding of silicon-on-silicon carbide substrates (2008)
- High Efficiency using Optimized SOI-Substrates (2008)
- High Power Efficiency using Very Low Resistivity SOI (2007)
- Optimisation of a smooth multilayer Nickel Silicide surface for ALN growth (2007)
- Buried Aluminum Nitride Insulator for SOI Substrates (2007)
- Novel Silicon-on-SiC Substrate with Superior Thermal and RF Performance (2007)
- Impact of Al-, Ni-, TiN-, and Mo metal gates on MOCVD-grown HfO2 and ZrO2 high-K dielectrics (2006)
- Processing and evaluation of metal gate/high-k/Si capacitors incorporating Al, Ni, TiN, and Mo as metal gate, and ZrO2 and HfO2 as high-k dielectric (2006)
- Comparative Study On The Impact Of TiN and Mo Metal Gates ON MOCVD-Grown HfO2 and ZrO2 High-k Dielectrics For CMOS Technology (2006)
- Low Resistivity SOI for Improved Efficiency of LDMOS (2006)
- Improved Efficiency for RF Power-MOSFETs using Low Resistivity SOI Substrates (2005)
- Analysis of crosstalk in SOI substrates (2005)
- Efficient Crosstalk Reduction Using Very Low Resistivity SOI Substrate (2005)
- Crosstalk Reduction Using Low Resistivity SOI (2005)
- Design and implementation of an ultra high precision parametric mismatch measurement system (2005)
- Metal gate work function extraction using Fowler-Nordheim tunneling techniques (2005)
- Investigation of Ta2O5 thin film MIM capacitors in the RF regime (2005)
- Low Resistivity SOI Substrates for Improved Efficiency of RF Power-MOSFETs (2004)
- An accurate direct extraction technique for the MBVD resonator model (2004)
- High-Voltage SOI Devices for Automotive Applications (2004)
- Analysis and improvments of high frequency substrate losses for RF MOSFETs (2003)
- Simulation and modeling of the substrate influence on the high frequency performance for RF LDMOS (2003)
- Substrate Resistance Modeling for Noise Coupling Analysis (2003)
- Flatband Voltage Adjustment USing Reactively Sputtered TiN Metal Gates (2003)
- Effects of low-temperature water vapor annealing of strained SiGe surface-channel pMOSFETs with high-κ dielectric (2003)
- ALD metal-gate/high-k gate stack for Si and Si0.7Ge0.3 surface-channel pMOSFETs (2003)
- Vertical High Voltage Devices on Thick SOI with Back-End Trench Formation (2002)
- Novel BiCMOS Compatible, Short Channel LDMOS Technology for Medium Voltage RF & Power Applications (2002)
- Comparison Between Si-LDMOS and GaN-Based Microwave Power Transistors (2002)
- Investigation of ALCVD TM TiN/Al2O3/HfAlOx/Al2O3 stack on epitaxial Si and Si0.7Ge0.3 (2002)
- SPICE Modeling of High Voltage LDMOS Transistors (2001)
- Effect of Dopants on Mechanical Polishing of Silicon (2001)
- Chemical Mechanical Polishing for Surface Smoothing (2001)
- High Voltage Devices on SOI (2001)
- Substitutional Effects of the Dielectric Constant in Ta2O5 (2001)
- Self Heating Effects of High Power DMOS Transistors (2001)
- Modelling of Self Heating Effects of High Power Novel Vertical DMOS Transistors (2001)
- High Voltage LDMOS Transistors for Increasing RF Power Density and Gain (2001)
- Electrical Characterization of Thin Ta2O5 Films (2001)
- Integrated capacitors using reactive DC magnetron Co-sputtered (Ta2O5)1-x(TiO2)x thin films (2001)
- Simulation of SOI MOSFETs at GHz-frequencies (2000)
- Output power characteristics of high voltage LDMOS transistors (2000)
- Power Characteristics of High Voltage LDMOS Transistors (2000)
- Integration of high voltage devices on thick SOI substrates for automotive application (2000)
- Membrane covered electrically isolated through-wafer via hole (2000)
- Improved output conductance for low-voltage microwave LDMOS transistors (2000)
- An On-Wafer De-Embedding Technique for Silicon Transistors at Microwave Frequencies (1999)
- Integration of silicon and diamond, aluminum nitride or aluminum oxide for electronic materials (1999)
- A Capacitance-Voltage Measurement Method for DMOS Transistor Channel Length Extraction (1999)
- A CMOS Compatible Power MOSFET for Low Voltage GHz Operation (1999)
- An empirical high frequency large signal model for high voltage LDMOS transistors (1998)
- Integration of diamond and silicon for electronic materials (1998)
- Investigation of the Effect of Impurities in Slurries Used for Chemical Mechanical Polishing (1998)
- Modeling of Fringe Capacitances in the Oxide and the Depletion Region of a MOS Structure (1998)
- Properties of the Drift Region in a LDMOS Transistor (1998)
- BESOI materials with diamond or aluminium as buried insulator (1997)
- Electrical investigation of the silicon/diamond interface (1997)
- Colloidal Silica as a Final Polishing Slurry (1997)
- A Novel High-Frequency High-Voltage LDMOS Transistor using an Extended Gate RESURF Technology (1997)
- Modelling of the Gate Capacitance Behaviour of a High-Frequency Small-Signal LDMOS Transistor (1997)
- A new self aligned asymmetric lateral bipolar transistor (1996)
- A New High Voltage DMOS Transistor for Microwave Applications (1996)
- Electrical Properties of the Silicon/Diamond Interface (1996)
- Integration of a Novel High-Voltage Giga-Hertz DMOS Transistor into a Standard CMOS Process (1995)
- A High-Voltage Giga-Hertz DMOS Transistor Integrated into a Standard CMOS Process (1995)
- Steady State and Transient Thermal Characterization of Silicon on Diamond Materials (1994)
- High Current Gain Lateral Bipolar Action in DMOS Transistors (1994)
- Simulation of the electrical and thermal behaviour of SOI/SOD devices (1994)
- Etching mechanism of silicon (1993)
- Very High Current Gain Enhancement by Substrate Biasing of Lateral Bipolar Transistors on Thin SOI (1993)
- High Current Properties of Combined Schottky/pn Diodes; interaction between Closely Located Schottky and pn Diodes (1993)
- Formation of heat sinks using bonding and etch back technique in combination with diamond deposition (1993)
- Silicon on Diamond Heat Sinks by Bonding and Etch Back (1993)
- A Lateral Bipolar Transistor Concept Tested on SIMOX- and BSOI-Materials (1992)
- Activation of Sb in Ultra-Shallow poly-silicon emitter using rapid thermal processing (1989)
Patent
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